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od 2020-09-20

Title: STM study of titanium silicide nanostructure growth on Si(111)-(root 19 x root 19) substrate

Source: Applied Surface Science

Year : 2008

Abstract:

We have performed an STM/STS study of titanium silicide nanostructures grown on Si(1 1 1)-(root 19 x root 19) substrate by Ti evaporation and post-deposition annealing. The (root 19 x root 19) reconstruction was induced by Ni doping. The reaction between the deposited material and the substrate at 220 K was radically different from that observed in the case of the standard Si(1 1 1)-(7 x 7) substrate, as evidenced by the different evaporation time necessary to obtain a comparable coverage of the surface. The annealing was accomplished by direct heating of a crystal sample (up to 520 K, 670 K and 970 K). Measurements showed that coalescence of Ti nanoislands began between 520 K and 670 K. Annealing above 900 K led to alloying of Ti, Ni and Si. As a consequence, Si(1 1 1)-(7 x 7) reconstruction occurred at the cost of Si(1 1 1)-(root 19 x root 19). (C) 2008 Elsevier B. V. All rights reserved.

DOI: 10.1016/j.apsusc.2008.05.001   (Pobrane:  2018-01-28)