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Authors: Pshyk A.V., Coy E., Kempiński M., Scheibe B., Jurga S. |
Title: Low-temperature growth of epitaxial Ti2AlC MAX phase thin films by low-rate layer-by-layer PVD |
Source: Materials Research Letters |
Year : 2019 |
Abstract:
Here we report on the structural and tribo-mechanical characterization of epitaxial single-crystalline Ti2AlC MAX phase thin films, grown by means of electron beam physical vapor deposition at relatively low temperature (700 degrees C). The growth of phase pure Ti2AlC at a relatively lower temperature when compared to other PVD methods was achieved utilizing a relatively low deposition rate and layer-by-layer deposition technique. The epitaxial growth is evidenced through the combination of XRD, HR-TEM and Raman spectroscopy measurements. The nanomechanical and micro-scale tribological properties of the Ti2AlC thin films were studied by means of nanoindentation and nanoscratch tests. IMPACT STATEMENT The growth temperature of phase pure single-crystalline Ti2AlC MAX phase thin films was reduced to 700 degrees C utilizing the low-rate layer-by-layer PVD technique.
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DOI: 10.1080/21663831.2019.1594428 (Pobrane: 2020-12-28)
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