Zakład Fizyki Makromolekularnej
Strona główna
Zespół
Badania
Aparatura
Seminaria
Publikacje
Nasze
konferencje
Aktywność
konferencyjna
Projekty
Programy
Najbliższe
wydarzenia
Linki
Kontakt

wizyta

od 2020-09-20


Authors: Iatsunskyi I., Jurga S., Smyntyna V., Pavlenko M., Myndrul V., Zaleska A.

Title: Raman spectroscopy of nanostructured silicon fabricated by metal-assisted chemical etching

Source: Proceedings of SPIE - Optical Micro- and Nanometrology V

Year : 2014


Abstract:

In this work, we present a detailed experimental Raman investigation of nanostructured silicon films prepared by metal-assisted chemical etching with different nanocrystal sizes and structures. Interpretation of observed one and two-phonon Raman peaks are presented. First-order Raman peak has a small redshift and broadening. This phenomenon is analyzed in the framework of the phonon confinement model. Second-order Raman peaks were found to be shifted and broadened in comparison to those in the bulk silicon. The peak shift and broadening of two-phonon Raman scattering relates to phonon confinement and disorder. A broad Raman peak between 900-1100 cm(-1) corresponds to superposition of three transverse optical phonons similar to 2TO (X), 2TO (W) and 2TO (L). Influence of excitation wavelength on intensity redistribution of two-phonon Raman scattering components (2TO) is demonstrated and preliminary theoretical explanation of this observation is presented.

DOI: 10.1117/12.2051489   (Pobrane:  2021-01-11)

 © Opisy i zdjęcia: Zakład Fizyki Makromolekularnej  | Ta stona używa ciasteczek
     Zaktualizowano: podstrony  2021-06-21  / bazę danych:   2021-08-30  by Webmaster: Zbigniew Fojud